super fast recovery diode rf2001ns3d ? series ? dimensions (unit : mm) ? land size figure (unit : mm) standard fast recovery ? applications general rectification ? features 1)ultra low switching loss 2)high current overload capacity ? structure 3)cathode common dual type ? construction silicon epitaxial planer ? absolute maximum ratings (tc=25 ?c) symbol limits unit v rm 350 v v r 300 v 20 a 100 a tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c, per diode) symbol min. typ. max. unit v f 1.2 1.3 v i r 0.03 10 a trr 17 25 ns rth(j-c) 2 c/w reverse voltage repetitive peak reverse voltage ? taping dimensions (unit : mm) parameter junction temperature forward current surge peak i fsm average rectified forward current io parameter storage temperature junction to case conditions thermal resistance reverse recovery time v r =300v i f =0.5a,i r =1a,irr=0.25i r reverse current forward voltage i f =10a 1/2 io per diode tc=90c 60hz half sin wave, non-repetitive one cycle peak value, tj=25c conditions duty 0.5 direct voltage 60hz half sin wave resistive load , rohm : lpds jeita : to263s manufacture year, week and day rf2001 ns3d ?? 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf2001ns3d 0.1 1 10 100 0 500 1000 1500 2000 tj=125 c tj=25 c tj=150 c tj=75 c per diode forward voltage v f (mv) v f - i f characteristics forward current:i f (a) 1 10 100 1000 10000 100000 0 50 100 150 200 250 300 tj=125 c tj=25 c tj=150 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics per diode 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz per diode 1000 1050 1100 1150 1200 1250 1300 v f dispersion map forward voltage:v f (mv) ave:1163mv i f =10a tj=25 c per diode 1 10 100 reverse current:i r (na) i r dispersion map ave:46.7na v r =300v tj=25 c per diode 180 200 220 240 ave:207.8pf capacitance between terminals:ct(pf) ct dispersion map f=1mhz v r =0v tj=25 c per diode 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf2001ns3d 0 50 100 150 200 250 300 ave:167.5a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 ave:16.9ns trr dispersion map reverse recovery time:trr(ns) i f =0.5a i r =1a irr=0.25 i r tj=25 c per diode 1 10 100 1000 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 10 100 1000 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 c=200pf r=0 no break at 30kv c=100pf r=1.5k ave 29.8kv electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf2001ns3d 0 5 10 15 20 25 30 35 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current io(a) io - pf characteristics 0 5 10 15 20 25 30 35 0 30 60 90 120 150 d=0.2 d.c. d=0.5 d=0.8 half sin wave d=0.1 d=0.05 ambient temperature:ta( c ) derating curve (io - ta) average rectified forward current:io(a) t tj=150 c d=t/t t v r io v r =280v 0a 0v average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =280v 0a 0v 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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